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PD - 95863
SMPS MOSFET
Applications
l
HEXFET(R) Power MOSFET
IRF6218S IRF6218L
ID
-27A
Reset Switch for Active Clamp Reset DC-DC converters
VDSS
RDS(on) max
-150V 150m:@VGS = -10V
Benefits
l l
l
Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
D
G S
D2Pak IRF6218S
TO-262 IRF6218L
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C IDM Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
-150 20 -27 -19 -110 250 1.6 8.2 -55 to + 175
Units
V A
ID @ TC = 100C Continuous Drain Current, VGS @ 10V
c
PD @TC = 25C Maximum Power Dissipation Linear Derating Factor dv/dt TJ TSTG Peak Diode Recovery dv/dt Operating Junction and
W W/C V/ns C
h
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
RJC RJA Junction-to-Case
g
Parameter
Typ.
--- ---
Max.
0.61 40
Units
C/W
Junction-to-Ambient (PCB Mounted, steady state)gh
Notes through are on page 9
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1
4/22/04
IRF6218S/L
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-150 --- --- -3.0 --- --- --- --- --- -0.17 120 --- --- --- --- --- --- --- 150 -5.0 -25 -250 -100 100 nA V
Conditions
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA m VGS = -10V, ID = -16A V A
f
VDS = VGS, ID = -250A VDS = -120V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150C VGS = -20V VGS = 20V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 71 21 32 21 70 35 30 2210 370 89 2220 170 340 --- 110 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = -16A
Conditions
VDS = -50V, ID = -16A VDS = -120V VGS = -10V VDD = -75V ID = -16A RG = 3.9 VGS = -10V VGS = 0V VDS = -25V = 1.0MHz VGS = 0V, VDS = -1.0V, = 1.0MHz VGS = 0V, VDS = -120V, = 1.0MHz VGS = 0V, VDS = 0V to -120V
f f
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 210 -16 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 150 860 -27 A -110 -1.6 --- --- V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = -16A, VGS = 0V
f
TJ = 25C, IF = -16A, VDD = -25V di/dt = -100A/s
f
2
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IRF6218S/L
1000
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
1000
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
-ID, Drain-to-Source Current (A)
100
10
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
1 -4.5V 0.1
1
-4.5V
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 175C 10 100
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D, Drain-to-Source Current ()
ID = -27A VGS = -10V
2.0
T J = 25C
T J = 175C
10
1.5
1.0
1.0 2 4 6
VDS = 50V 60s PULSE WIDTH 8 10 12
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-V GS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRF6218S/L
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
12.0 ID= -16A
-V GS, Gate-to-Source Voltage (V)
10.0
VDS= 120V VDS= 75V VDS= 30V
10000
C, Capacitance(pF)
8.0 6.0
Ciss
1000
Coss
100
4.0
Crss
2.0
10 1 10 100
0.0 0 10 20 30 40 50 60 70 80
-V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00 T J = 175C
10.00
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10 Tc = 25C Tj = 175C Single Pulse 1 1 10 100
100sec
1.00
T J = 25C
1msec 10msec 1000
VGS = 0V 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -V SD, Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF6218S/L
30
V DS
25
-I D, Drain Current (A)
RD
VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
15
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
Ri (C/W) i (sec) 0.264 0.000285 0.206 0.140 0.001867 0.013518
1
0.01
2
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
20
VDD
5
IRF6218S/L
RDS (on) , Drain-to-Source On Resistance (m )
400
RDS(on) , Drain-to -Source On Resistance (m)
1000 900 800 700 600 500 400 300 200 100 0 4 5 6 7 8 9 10 11 12
350
300 VGS = -10V 250
ID = -27A
200
150
100 0 20 40 60 80 -I D , Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance vs. Gate Voltage
50K 12V .2F .3F
-VGS
QGS
+ D.U.T. VDS
QG QGD
900
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
-3mA
800 700 600 500 400 300 200 100 0
Charge
IG
ID
ID -4.6A -6.3A BOTTOM -16A TOP
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
L
VDS
I AS
RG
D.U.T
IAS
VDD A DRIVER
-20V
tp
0.01
tp V(BR)DSS
15V
25
50
75
100
125
150
175
Starting T J , Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF6218S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
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7
2- COLLECTOR
3- EMITTER
IGBT
1- GATE
S @ 7 H V I A U S 6 Q
@ 9 P 8 A @ U 6 9
& ( ( A 2 A & A S 6 @
( A F @ @ X
8 A @ DI G
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
G 6 I DP U 6 I S @ U DI
S D@ DA U 8 @ S
P B P G
G 7 H @ T T 6
@ 9 P 8 A U P G
TO-262 Package Outline
IRF6218S/L
G " " G S D A I 6 A DT A DT C U ) @ G Q H 6 Y @
( ' & A @ 9 P 8 A U P G
& ( ( A ( A X X A I P A 9 @ G 7 H @ T T 6
A 8 A A @ I D G A G 7 H @ T T 6 A @ C U A DI
8
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IRF6218S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.6mH, RG = 25, IAS = -17A. ISD -17A, di/dt -520A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%.
Rq is measured at TJ of approximately 90C. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.4/04
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9

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